FORMATION OF LAYERS IN THE MIGRATION OF ELECTRONS WHEN HETEROSTRUCTURES OCCUR IN MDYA STRUCTURES

Abstract

This is due to the interaction of silicon bonding at a temperature of 3500 C where hydrogen atoms can form stable Si-H. Passivation of defects in thin films, ie to protect the metal surface from defects corrosion. Their formation is energetically favorable because the total energy of the complex is 1.2 eV less than the total energy of H2, and neutral hydrogen atoms are observed to diffuse and behave. The mitigation of the simplest defects is accompanied by the restoration of the suspended bonds, and the release of hydrogen from the bonded state is indicated. The breaking energy of the Si-H bond is about 1.8 eV and the diffusion energy of atomic hydrogen is about 0.48 eV.