ELECTRON SYNTHESIS IS A METHOD FOR THE FORMATION OF LAYERS IN MIGRATIONS LEADING TO THE FORMATION OF HETEROSTRUCTURES DURING THE TRANSFER OF A NEW PHASE

Authors

  • Mamatkarimov Odiljon Okhundedaevich Doctor of Physical and Mathematical Sciences, Professor, Namangan Institute of Engineering Technology
  • Kuchkarov Behzod Khoshimzhanovich Doctor of Philosophy in Physics and Mathematics (PhD) Namangan Institute of Engineering Technology
  • Abdulkhaev Abrorbek Abdullokhonovich Assistant, Namangan Institute of Engineering Technology
  • Askarov Dilmurod Bakhtiyor ugli Assistant, Namangan Institute of Engineering Technology

DOI:

https://doi.org/10.17605/OSF.IO/5UXYQ

Keywords:

silicon nitride phase, thermionic synthesis of silicon, thin silicon

Abstract

Ion-electron synthesis is a method for the formation of implants of a new phase, implants arising during the formation of heterostructures, layers. The formation of a new phase during ion synthesis can occur as a result of the interaction of implanted atoms with target atoms or as a result of their interaction with each other. The use of ion-electron synthesis to create structures based on silicon has undoubted advantages over other methods, since this method is compatible with existing silicon technology.

Downloads

Published

2022-04-30

How to Cite

Mamatkarimov Odiljon Okhundedaevich, Kuchkarov Behzod Khoshimzhanovich, Abdulkhaev Abrorbek Abdullokhonovich, & Askarov Dilmurod Bakhtiyor ugli. (2022). ELECTRON SYNTHESIS IS A METHOD FOR THE FORMATION OF LAYERS IN MIGRATIONS LEADING TO THE FORMATION OF HETEROSTRUCTURES DURING THE TRANSFER OF A NEW PHASE. Web of Scientist: International Scientific Research Journal, 3(4), 1110–1118. https://doi.org/10.17605/OSF.IO/5UXYQ

Issue

Vol. 3 No. 4 (2022): wos

Section

Articles