TO STUDY THE ELECTROPHYSICAL PROPERTIES OF CDTE LAYER ON SILICON BASE AND THE EFFECT OF CREATED HETEROSTRUCTURE ON MOISTURE

Authors

  • I.B. Sapaev "Tashkent Irrigation and Agricultural Engineers Institute” National Research University
  • B. Sapaev Tashkent State Agrarian University, Ph.m.s.d., Professor
  • A. Abduraxmonov Institute of Telecommunications and Informatics of Turkmenistan
  • N.N. Abdusattorov Master's Degree of the National University of Uzbekistan

DOI:

https://doi.org/10.17605/OSF.IO/NAQHM

Keywords:

materials science, semiconductor, fundamental

Abstract

In this article, we are talking about semiconductor materials science, creating heterostructures based on cadmium telluride films obtained on a Si substrate and obtaining contacts on the created system. The morphology of the obtained films, the number of elements in the films, their distribution, and the size of polycrystalline particles were studied using modern instruments. The change in the volt-ampere characteristics of the obtained heterostructures depending on the humidity has been studied.

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Published

2022-05-25

How to Cite

I.B. Sapaev, B. Sapaev, A. Abduraxmonov, & N.N. Abdusattorov. (2022). TO STUDY THE ELECTROPHYSICAL PROPERTIES OF CDTE LAYER ON SILICON BASE AND THE EFFECT OF CREATED HETEROSTRUCTURE ON MOISTURE. Web of Scientist: International Scientific Research Journal, 3(5), 1132–1137. https://doi.org/10.17605/OSF.IO/NAQHM

Issue

Vol. 3 No. 5 (2022): wos

Section

Articles