INTERACTION OF VANADIUM ATOMS ALLOYED SILICON PARTICLES WITH OXYGEN

Authors

  • Rasulov Sh.Z. Semiconductor Physics and Microelectronics Scientific Research Institute at the National University of Uzbekistan
  • Yuldoshev Z.N. Semiconductor Physics and Microelectronics Scientific Research Institute at the National University of Uzbekistan
  • Axmadov M.A. Semiconductor Physics and Microelectronics Scientific Research Institute at the National University of Uzbekistan

DOI:

https://doi.org/10.17605/OSF.IO/KY3TP

Keywords:

Vanadium, Silicon, semiconductors, DLTS, IRS

Abstract

This article provides information on the effect of oxygen on particles in semiconductor materials doped with vanadium atoms, which are formed during the improvement of the electrophysical properties of silicon semiconductors. The research was conducted in 2021-2022 in the laboratory of the Semiconductor Physics and Microelectronics Scientific Research Institute at the National University of Uzbekistan.

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Published

2022-10-03

Issue

Vol. 3 No. 10 (2022): wos

Section

Articles