INVESTIGATION OF PARAMETERS CHARACTERIZING A TUNNEL DIODE UNDER THE ACTION OF A SUPERHIGH-FREQUENCY (MW) FIELD IN THE TSU-ESAKI MODEL

Authors

  • Nazarov Shohruh Rustamjonovich Namangan Civil Engineering Institute
  • Uktamova Munira Komiljon kizi Research Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan

DOI:

https://doi.org/10.17605/OSF.IO/TRJCS

Keywords:

Tsu-Esaki model, quality factor, differential resistance, diffusion capacitance.

Abstract

It has been theoretically studied that a sharp increase in the electron temperature strongly affects the current-voltage characteristic of a tunnel diode, at high temperatures causing a decrease in the area with negative differential resistance in the current-voltage characteristic and is the cause of an increase in diffusion capacitance. In addition, it has been observed that an increase in diffusion capacitance leads to a decrease in the quality factor of a tunnel diode.

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Published

2022-10-20

Issue

Vol. 3 No. 10 (2022): wos

Section

Articles