GROWING A CdTe LAYER ON A SILICON SUBSTRATE AND STUDYING THE ELECTOPHYSICAL PROPERTIES OF THE CREATED HETEROSTRUCTURE AND INFLUENCE ON HUMIDITY

Authors

  • Q. A. Yuldashev Namangan Engineering Construction Institute
  • A. A. Abdullaev Namangan Engineering Construction Institute
  • D. T. Sidigaliev Namangan Engineering Construction Institute

DOI:

https://doi.org/10.17605/OSF.IO/T63J2

Keywords:

materials science, semiconductor, fundamental, metals, silicon, mechanical engineering

Abstract

In this article, we are talking about semiconductor materials science, creating heterostructures based on cadmium telluride films obtained on a Si substrate and obtaining contacts on the created system. The morphology of the obtained films, the number of elements in the films, their distribution, and the size of polycrystalline particles were studied using modern instruments. The change in the volt-ampere characteristics of the obtained heterostructures depending on the humidity has been studied.

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Published

2022-10-25

How to Cite

Q. A. Yuldashev, A. A. Abdullaev, & D. T. Sidigaliev. (2022). GROWING A CdTe LAYER ON A SILICON SUBSTRATE AND STUDYING THE ELECTOPHYSICAL PROPERTIES OF THE CREATED HETEROSTRUCTURE AND INFLUENCE ON HUMIDITY. Web of Scientist: International Scientific Research Journal, 3(10), 968–973. https://doi.org/10.17605/OSF.IO/T63J2

Issue

Vol. 3 No. 10 (2022): wos

Section

Articles