INVESTIGATION OF SILICON SAMPLES DOPED WITH TERBIUM AND THULIUM

Authors

  • Ya. A. Saidimov Scientific Research Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan named after M. Ulugbek (Tashkent), Uzbekistan
  • F. B. Umarov Scientific Research Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan named after M. Ulugbek (Tashkent), Uzbekistan

Keywords:

monocrystalline silicon, rare earth elements, thulium, terbium, alloying, diffusion method, thermosonde, four-probe, Van der Pau method, infrared Fourier spectrometer FSM-2201.

Abstract

This paper presents experimental results of the effect of thulium and terbium impurities on electrophysical parameters, as well as their interaction with background impurities of single-crystal silicon grown by the Czochralski method

Downloads

Published

2024-09-20

How to Cite

Ya. A. Saidimov, & F. B. Umarov. (2024). INVESTIGATION OF SILICON SAMPLES DOPED WITH TERBIUM AND THULIUM. Web of Scientist: International Scientific Research Journal, 5(9), 78–82. Retrieved from https://wos.academiascience.org/index.php/wos/article/view/5042

Issue

Vol. 5 No. 9 (2024): wos

Section

Articles

License

Copyright (c) 2024 Web of Scientist: International Scientific Research Journal

Creative Commons License

This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.