STUDY OF U-I AND U-C-2 CHARACTERISTICS OF A SCHOTTKY BARRIER DIODE BASED ON Zn x Cd 1-x S-Au

Authors

  • S. A. Muzafarova
  • N. A. Akhmedova Uzbekistan National University Under Semiconductors Physics and Microelectronics Research Institute, 100057, Uzbekistan, Tashkent, Yangi Olmazor Street, House 20

DOI:

https://doi.org/10.17605/

Keywords:

Heterostructure, thin layer, Schottky diode, photodetector.

Abstract

Two kind with temperature source and diaper under the circumstances semiconductor layers gas transportation in the way grower on the device Zn x Cd 1-x S thin layers grown. Schottky diode harvest to do for taken Au metal for samples contact was given. Prepared U-I and U-C-2 of structures classifications research was done. From the analyses diode from structures passing photocurrent and depletion layer width films create during source and diaper to the temperature related that was revealed .

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Published

2026-02-11

Issue

Vol. 7 No. 2 (2026): Wos

Section

Articles

License

Copyright (c) 2026 Web of Scientist: International Scientific Research Journal

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