STRUCTURAL PROPERTIES OF SENSOR DEVICE BASED ON MO-SI SYSTEM

Authors

  • Muzafarova S. A.
  • Tashlanova D. M. Uzbekistan National University New Semiconductors Physics and Microelectronics Institute st. Almazar, 20, Tashkent 100057, Uzbekistan

DOI:

https://doi.org/10.17605/

Keywords:

Magnetron sputtering, silicon, metal, semiconductor, silicide, morphology, phase, structure.

Abstract

Magnetron-ion sputtering through environment inert gas at room temperature in the atmosphere Czochralski method with cultivated silicon monocrystalline 1-2 microns on the surface thick molybdenum metal layer laid down. Thermal from annealing then, Mo atoms silicon monocrystalline deep molybdenum silicide alloy harvest This will do. at work this silicides morphology, structure and features studied.

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Published

2026-04-28

Issue

Vol. 7 No. 4 (2026): Wos

Section

Articles

License

Copyright (c) 2026 Web of Scientist: International Scientific Research Journal

Creative Commons License

This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.