I.B. SAPAEV; B. SAPAEV; A. ABDURAXMONOV; N.N. ABDUSATTOROV. TO STUDY THE ELECTROPHYSICAL PROPERTIES OF CDTE LAYER ON SILICON BASE AND THE EFFECT OF CREATED HETEROSTRUCTURE ON MOISTURE. Web of Scientist: International Scientific Research Journal, [S. l.], v. 3, n. 5, p. 1132–1137, 2022. DOI: 10.17605/OSF.IO/NAQHM. Disponível em: https://wos.academiascience.org/index.php/wos/article/view/1665. Acesso em: 26 nov. 2024.