THE EFFECT OF ACCELERATED PROTONS ON THE ELECTROPHYSICAL PARAMETERS OF THERMISTORS BASED ON N-SI<NI> AND N-SI<CU>

Authors

  • Kuldashev A. H.
  • Saidimov Ya. A.
  • Mannanov M. I. Research Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan (Tashkent), Uzbekistan

Keywords:

silicon, doping, accelerated proton, temperature sensitivity coefficient, resistivity, electrostatic generator, EG-2 accelerator.

Abstract

Modification of semiconductors by proton beams, which is carried out by controlled introduction of radiation defects into the semiconductor, is analyzed. The effect of accelerated protons on the electrophysical parameters of silicon doped with Ni and Cu impurities is shown.

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Published

2023-09-10

How to Cite

Kuldashev A. H., Saidimov Ya. A., & Mannanov M. I. (2023). THE EFFECT OF ACCELERATED PROTONS ON THE ELECTROPHYSICAL PARAMETERS OF THERMISTORS BASED ON N-SI<NI> AND N-SI<CU>. Web of Scientist: International Scientific Research Journal, 4(9), 14–18. Retrieved from https://wos.academiascience.org/index.php/wos/article/view/4343

Issue

Vol. 4 No. 9 (2023): wos

Section

Articles

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Copyright (c) 2023 Web of Scientist: International Scientific Research Journal

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This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.