DOPING A SILICON SINGLE CRYSTAL WITH THULIUM BY THE DIFFUSION METHOD

Authors

  • Saidimov Ya. A.
  • Umarov F. B. Research Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan (Tashkent), Uzbekistan

Keywords:

monocrystalline silicon, rare earth elements, thulium, terbium, diffusion method, alloying, hall effect, van der paa method, type of conductivity, concentration of charge carriers, resistivity, scanning electron microscope (SEM).

Abstract

Using the diffusion method, monocrystalline silicon samples doped with thulium were produced at a temperature of 1,250°C for 50 hours. After high-temperature annealing, it was found that the p-type conductivity of the samples changed to n-type due to the diffusion process.

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Published

2024-04-12

How to Cite

Saidimov Ya. A., & Umarov F. B. (2024). DOPING A SILICON SINGLE CRYSTAL WITH THULIUM BY THE DIFFUSION METHOD. Web of Scientist: International Scientific Research Journal, 5(4), 147–151. Retrieved from https://wos.academiascience.org/index.php/wos/article/view/4818

Issue

Vol. 5 No. 4 (2024): wos

Section

Articles

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Copyright (c) 2024 Web of Scientist: International Scientific Research Journal

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