INFLUENCE OF IMPURITY Ni AND Cu ATOMS ON THE ELECTROPHYSICAL PROPERTIES OF Si

Authors

  • N. A. Turgunov
  • E. Kh. Berkinov
  • R. M. Turmanova Scientific Research Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan

DOI:

https://doi.org/10.17605/OSF.IO/ANVTW

Keywords:

silicon, nickel, copper, impurity, Hall effect.

Abstract

The paper presents the results of studies of the electrophysical properties of Si, doped Ni and Cu samples.

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Published

2023-05-31

Issue

Vol. 4 No. 5 (2023): wos

Section

Articles

License

Copyright (c) 2023 Web of Scientist: International Scientific Research Journal

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This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.